Publication: Characterization of GaSb-based heterostructures by scanning electron microscope cathodoluminescence and scanning tunnelling microscope
Loading...
Official URL
Full text at PDC
Publication Date
2004-06-21
Advisors (or tutors)
Editors
Journal Title
Journal ISSN
Volume Title
Publisher
Institute of Physics
Citations
Exportar
Abstract
The luminescence of GaSb and AlGaSb layers grown on GaAs substrates by metal organic vapour phase epitaxy has been studied by means of cathodoluminescence (CL) rising a scanning electron microscope. CL plane-view analysis reveals a distribution of defects, as misfit dislocations, in some of the structures. The luminescence bands observed in the GaSb layers are related to near band edge recombination and to an excess of Ga. In the case of AlGaSb/GaSb heterostructure emission bands related to the ternary compound and to donor-acceptor recombination are detected. In addition, with the aid of a scanning tunnelling microscope (STM), local electronic properties, such as conductance and surface energy gap, were studied in sample cross-sections. The results obtained from imaging and spectroscopy modes of STM enabled us to image the single AlGaSb layer.
Description
© 2004 IOP Publishing Ltd.
This work was carried out in the framework of a European network project (HPRN-CT-2001-00199). Partial support of
MCYT (MAT2000-2119) is acknowledged.
International Workshop on Beam Injection Assessment of Microstructures in Semiconductors, (BIAMS 2003) (7. 2003. Lille, Francia)
UCM subjects
Unesco subjects
Keywords
Citation
[1] Dutta P S, Bhat H L and Kumar V 1997 J. Appl. Phys. 81 5
[2] Couts T J, Benner J P and Allman C S (ed) 1998 Proc. 4th NREL Conf. on Thermophotovoltaic Generation of Electricity (Denver, CO) (AIP Conf. Proc. vol 460) (New York: American Institute of Physics)
[3] Qian W, Skowronski M, Kaspi R, de Graef M and Dravid V P 1997 J. Appl. Phys. 81 7268
[4] Yi S S, Hansen D M, Inoki C K, Harris D L, Kuan T S and Kuech T F 2000 Appl. Phys. Lett. 77 842
[5] Feenstra R M 1994 Surf. Sci. 299/300 965
[6] Stroscio J A, Feenstra R M and Fein A P 1986 Phys. Rev. Lett. 57 2579
[7] Feenstra R M, Stroscio J A and Fein A P 1987 Surf. Sci. 181 295
[8] Rocher A 1971 Solid State Phenom. 19/20 563
[9] Rocher A, Kang J M and Ponchet A 1992 MRS Symp. Proc. 238 91
[10] Kim J, Seong T, Mason N J and Walker P J 1998 J. Electron. Mater. 27 466
[11] Méndez B, Dutta P S, Piqueras J and Dieguez E 1995 Appl. Phys. Lett. 67 2648
[12] Jiang W J, Sun Y M and Wu M C 1995 J. Appl. Phys. 77 1725
[13] Agert C, Galdkov P and Bett A W 2002 Semicond. Sci. Technol. 17 39
[14] Chidley E T R, Haywood S K, Henriques A B, Mason N J, Nicholas R J and Walker P J 1991 Semicond. Sci. Technol. 6 45
[15] Kitamura N, Yamamoto H, Maeda Y, Usami A and Wada T 1987 Semicond. Sci. Technol. 2 318
[16] Hidalgo P, Méndez B, Piqueras J, Dutta P S and Dieguez E 1999 Phys. Rev. B 60 10613