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Electrical characterization of nanocrystalline Si films by scanning tunnelling spectroscopy and beam-induced current in the scanning tunnelling microscope

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Publication Date
2003-01
Authors
Méndez Martín, Bianchi
Piqueras de Noriega, Javier
Plugaru, R
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Iop Publishing Ltd
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Nanocrystalline silicon films, with an average nanocrystal size of about 10 nm, obtained by boron implantation of amorphous silicon layers, have been studied by remote-beam-induced current (REBIC) in a scanning tunnelling microscope (STM) and by current imaging tunnelling spectroscopy. STM images reveal a cell structure with cell sizes of about 200 nm. STM-REBIC images display space-charge regions associated with the cell boundaries. The STM-REBIC contrast has been found to depend on the implantation dose and the thermal treatment given to the sample. The results show the capability of STM-REBIC to image electrically active regions in nanocrystalline silicon films with a resolution of up to 10 nm.
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© 2003 IOP Publishing Ltd. This work has been supported by MCYT (Project MAT 2000-2119). RP acknowledges MECD for the research grant SB2000-0164.
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