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Study of thermal treated a-Si implanted with Er and O ions

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Plugaru, R. and Méndez Martín, Bianchi and Piqueras de Noriega, Javier and Tate, T.J. (2002) Study of thermal treated a-Si implanted with Er and O ions. Journal of Physics: Condensed Mater, 14 (48). pp. 13153-13159. ISSN 0953-8984

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Official URL: http://iopscience.iop.org/0953-8984/14/48/363


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Abstract

Visible luminescence of amorphous silicon layers either implanted with Er or co-implanted with Er and O and subsequently annealed in nitrogen has been investigated by cathodoluminescence (CL) in a scanning electron microscope. Co-implanted samples show a more intense luminescence, which is revealed by annealing at lower temperatures than the samples implanted only with erbium. Thermal treatments cause the formation of erbium oxide as well as Er-Si complexes or precipitates. Violet-blue luminescence has been found from CL images and spectra to be related to Er-Si precipitates. Emission in the green-red range is attributed to oxide species.


Item Type:Article
Additional Information:

© 2002 IOP Publishing Ltd.
This work has been supported byMCYT (ProjectMAT2000-2119). RP acknowledgesMECD for the research grant SB2000-0164.
Conference on Extended Defects in Semiconductors (EDS 2002)(2002. Bologna, Italia)

Uncontrolled Keywords:Erbium Luminescence, Amorphous-Silicon, Crystal Silicon, Porous Silicon, Excitation, Cathodoluminescence, Photoluminescence, Films, Segregation, Epitaxy
Subjects:Sciences > Physics > Materials
ID Code:24419
Deposited On:30 Jan 2014 17:18
Last Modified:07 Feb 2014 11:17

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