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Cathodo- and photo-luminescence of erbium ions in nano-crystalline silicon: mechanism of excitation energy transfer

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Nogales Díaz, Emilio and Montone, A. and Cardellini, F. and Méndez Martín, Bianchi and Piqueras de Noriega, Javier (2002) Cathodo- and photo-luminescence of erbium ions in nano-crystalline silicon: mechanism of excitation energy transfer. Journal of Optoelectronics and advanced materials, 4 (4). pp. 883-892. ISSN 1454-4164

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Abstract

The processes of the characteristic radiative transition of Er3+ ions involved in optically active centers in nano-crystalline silicon have been studied by photo-luminescence (PL) and cathodo-luminescence (CL). Infrared emission is observed in cathodo-luminescence and in photoluminescence spectrum excited with photons of 488 nm. The maximum intensity at 1540 nm was obtained under photons excitation and is about ten times higher in nanocrystalline silicon doped with Er and O than in Er doped crystalline silicon.


Item Type:Article
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© Natl Inst Optoelectronics.
This work was supported by MCYT (Project MAT2000-2119). R.P. acknowledges MECD for the research grant SB 2000-0164.

Uncontrolled Keywords:Visible Luminescence, Amorphous-Silicon, Local-Structure, Doped Silicon, Si, Er, Films, Electroluminescence, Emission, Centers
Subjects:Sciences > Physics > Materials
ID Code:24425
Deposited On:31 Jan 2014 16:45
Last Modified:07 Feb 2014 11:17

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