Universidad Complutense de Madrid
E-Prints Complutense

Compositional and structural analysis of Nd-doped GaSb bulk crystals grown by the vertical Bridgman technique

Impacto

Downloads

Downloads per month over past year



Plaza, J. L: and Hidalgo Alcalde, Pedro and Méndez Martín, Bianchi and Piqueras de Noriega, Javier and Dieguez, E. (2002) Compositional and structural analysis of Nd-doped GaSb bulk crystals grown by the vertical Bridgman technique. Journal of Crystal Growth , 241 (3). pp. 283-288. ISSN 0022-0248

[img] PDF
Restringido a Repository staff only hasta 31 December 2020.

244kB

Official URL: http://www.sciencedirect.com/science/article/pii/S0022024802012496


URLURL Type
http://www.sciencedirect.comPublisher


Abstract

Nd-doped GaSb bulk crystals with three different dopant concentrations have been grown by the vertical Bridgman technique. The axial segregation has been characterised by obtaining the effective segregation coefficient. Differences in the value of this coefficient show its dopant concentration dependence. Resistivity, carrier density and mobility have also been obtained showing the p-type nature of this material. Structural and compositional properties have been studied revealing some inclusions with high Nd concentration in the highest Nd-doped ingot.


Item Type:Article
Additional Information:

© 2002 Published by Elsevier Science B.V.
This work has been supported by CICYT under theproje ct ESP-98 1340 and by INTAS-ESA Project number 99 01814.

Uncontrolled Keywords:Gallium-Phosphide, Luminescence, Silicon, Ytterbium, Gaas, Inp, Gap
Subjects:Sciences > Physics > Materials
ID Code:24439
Deposited On:31 Jan 2014 17:11
Last Modified:06 Jun 2014 13:42

Origin of downloads

Repository Staff Only: item control page