Universidad Complutense de Madrid
E-Prints Complutense

Study of the defect structure, compositional and electrical properties of Er_2O_3-doped n-type GaSb : Te crystals grown by the vertical Bridgman technique

Impacto

Downloads

Downloads per month over past year



Plaza, J. L. and Hidalgo Alcalde, Pedro and Méndez Martín, Bianchi and Piqueras de Noriega, Javier and Dieguez, E. (2002) Study of the defect structure, compositional and electrical properties of Er_2O_3-doped n-type GaSb : Te crystals grown by the vertical Bridgman technique. Materials Science and Engineering B-Solid State Materials for Advanced Technology, 91-92 . pp. 529-533. ISSN 0921-5107

[img] PDF
Restringido a Repository staff only hasta 31 December 2020.

218kB

Official URL: http://www.sciencedirect.com/science/article/pii/S0921510701010650


URLURL Type
http://www.sciencedirect.comPublisher


Abstract

The defect structure of Te-doped GaSb samples co-doped with Er_2O_3 and grown by the vertical Bridgman technique has been analysed. This study was carried out for different Er and Te concentrations. The defect structure of the samples has been analysed by means of cathodoluminescence (CL), scanning electron microscopy (SEM) and wavelength dispersive X-ray microanalysis (WDX). The effect of the defect structure and sample composition on the electrical properties of the material has been established taking into account the results obtained by means of the van der Pauw technique.


Item Type:Article
Additional Information:

© 2002 Elsevier Science B.V.
International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (9. 2001. Ramini, Italia)

Subjects:Sciences > Physics > Materials
ID Code:24447
Deposited On:13 Mar 2014 12:25
Last Modified:06 Jun 2014 17:53

Origin of downloads

Repository Staff Only: item control page