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Study of GaSb junction devices by cathodoluminescence and scanning tunneling spectroscopy

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Hidalgo Alcalde, Pedro y Méndez Martín, Bianchi y Piqueras de Noriega, Javier y Dutta, P: S. (2000) Study of GaSb junction devices by cathodoluminescence and scanning tunneling spectroscopy. In Optical Microstructural Characterization of Semiconductors. MRS Online Proceedings Library (588). Materials Research Society, pp. 239-244. ISBN 1-55899-496-3

URL Oficial: http://dx.doi.org/10.1557/PROC-588-239


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http://journals.cambridge.orgEditorial


Resumen

GaSb p-n junctions formed by Zn diffusion in Te-doped n-GaSb single crystalline wafers have been characterized by cathodoluminescence (CL) microscopy and by scanning tunneling spectroscopy. CL plane-view observations of the Zn diffused side enable to study the homogeneity of the diffusion treatment. Spectra recorded by current imaging tunneling spectroscopy (CITS) in the n and p sides of the junction, clearly show the respective conductive behaviour and provide information on the local surface band gaps. Results are related to the diffusion profile measured by secondary ion mass spectrometry (SIMS).


Tipo de documento:Sección de libro
Información Adicional:

©Materials Research Society.
Symposium on Optical Microstructural Characterization of Semiconductors held at the 1999 MRS Fall Meeting (1999. Boston)

Palabras clave:Gallium Antimonide, Doped Gasb
Materias:Ciencias > Física > Física de materiales
Código ID:24653
Depositado:14 Mar 2014 17:46
Última Modificación:06 Jun 2014 17:48

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