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Study of GaSb junction devices by cathodoluminescence and scanning tunneling spectroscopy



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Hidalgo Alcalde, Pedro and Méndez Martín, Bianchi and Piqueras de Noriega, Javier and Dutta, P: S. (2000) Study of GaSb junction devices by cathodoluminescence and scanning tunneling spectroscopy. In Optical Microstructural Characterization of Semiconductors. MRS Online Proceedings Library (588). Materials Research Society, pp. 239-244. ISBN 1-55899-496-3

Official URL: http://dx.doi.org/10.1557/PROC-588-239



GaSb p-n junctions formed by Zn diffusion in Te-doped n-GaSb single crystalline wafers have been characterized by cathodoluminescence (CL) microscopy and by scanning tunneling spectroscopy. CL plane-view observations of the Zn diffused side enable to study the homogeneity of the diffusion treatment. Spectra recorded by current imaging tunneling spectroscopy (CITS) in the n and p sides of the junction, clearly show the respective conductive behaviour and provide information on the local surface band gaps. Results are related to the diffusion profile measured by secondary ion mass spectrometry (SIMS).

Item Type:Book Section
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©Materials Research Society.
Symposium on Optical Microstructural Characterization of Semiconductors held at the 1999 MRS Fall Meeting (1999. Boston)

Uncontrolled Keywords:Gallium Antimonide, Doped Gasb
Subjects:Sciences > Physics > Materials
ID Code:24653
Deposited On:14 Mar 2014 17:46
Last Modified:06 Jun 2014 17:48

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