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Scanning tunneling spectroscopy of transition-metal-doped GaSb

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Hidalgo Alcalde, Pedro and Méndez Martín, Bianchi and Piqueras de Noriega, Javier and Dutta, P: S. and Dieguez, E. (1999) Scanning tunneling spectroscopy of transition-metal-doped GaSb. Physical review B, 60 (15). pp. 1613-1615. ISSN 0163-1829

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Official URL: http://prb.aps.org/abstract/PRB/v60/i15/p10613_1


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Abstract

V- and Ru-doped GaSb crystals have been investigated by scanning tunneling spectroscopy in a combined scanning electron microscope-scanning tunneling microscope system. Local variations of surface band gap have been measured with high spatial resolution. Precipitates in both kinds of doped samples show a nearly metallic behavior. The surface band gaps in the GaSb matrix have been found to depend on the dopant. [S0163-1829(99)06439-5].


Item Type:Article
Additional Information:

©1999 The American Physical Society.
This work was supported by DGES (PB96-0639) and by CICYT (ESP98-1340) (MAT98-1306E).

Uncontrolled Keywords:Gallium Antimonide
Subjects:Sciences > Physics > Materials
ID Code:24654
Deposited On:14 Mar 2014 17:41
Last Modified:06 Jun 2014 17:47

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