Publication: Scanning tunneling spectroscopy of transition-metal-doped GaSb
Loading...
Official URL
Full text at PDC
Publication Date
1999-10-15
Advisors (or tutors)
Editors
Journal Title
Journal ISSN
Volume Title
Publisher
American Physical Society
Citations
Exportar
Abstract
V- and Ru-doped GaSb crystals have been investigated by scanning tunneling spectroscopy in a combined scanning electron microscope-scanning tunneling microscope system. Local variations of surface band gap have been measured with high spatial resolution. Precipitates in both kinds of doped samples show a nearly metallic behavior. The surface band gaps in the GaSb matrix have been found to depend on the dopant. [S0163-1829(99)06439-5].
Description
©1999 The American Physical Society.
This work was supported by DGES (PB96-0639) and by CICYT (ESP98-1340) (MAT98-1306E).
UCM subjects
Unesco subjects
Keywords
Citation
1 P. S. Dutta, H. L. Baht, and V. Kumar, J. Appl. Phys. 81, 5821 (1997).
2 P. Hidalgo, B. Méndez, P. S. Dutta, J. Piqueras, and E. Dieguez, Phys. Rev. B 57, 6479 (1998).
3 E. I. Georgitsé, L. M. Gutsulyak, V. I. Ivanov-Omskil, V. A. Smirnov, and Sh. U. Yuldashev, Fiz. Tekh. Poluprovodn. 25,1960 (1991) @Sov. Phys. Semicond. 25, 1180 (1991).
4 R. J. Hammers, R. M. Tromp, and J. E. Demuth, Phys. Rev. Lett. 56, 1972 (1986).
5 R. M. Feenstra, Surf. Sci. 299/300, 965 (1994).
6 R. M. Feenstra, J. A. Stroscio, and A. P. Fein, Surf. Sci. 181, 295 (1987).
7 B. Méndez, J. Piqueras, P. S. Dutta, and E. Dieguez, Mater. Sci. Eng., B B42, 38 (1996).