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Characterization of parasitics in microwave devices by comparing S and noise parameter measurements with two different on wafer calibration techniques

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2001
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IEEE
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This paper presents a procedure for an accurate characterization of parasitic effects of terminal pads in microwave devices. This procedure is based on the measurement of S and Noise parameters of the device with two different sets of calibration standards, and simplifies the process of extracting the parasitic elements of the small signal equivalent circuit.
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© IEEE. IEEE Instrumentation and Measurement Technology Conference (IMTC/2001) (18.2001.Budapest, Hungria).
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