Publication:
Effect of In doping in GaSb crystals studied by cathodoluminescence

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Publication Date
1999-10
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Méndez Martín, Bianchi
Piqueras de Noriega, Javier
Dutta, P: S.
Dieguez, E.
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IOP Publishing LTD
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The luminescence properties of In doped GaSb single crystals have been studied by the cathodoluminescence (CL) technique in the scanning electron microscope. It has been found that indium induces a certain reduction on the native acceptor concentration in contrast to what occurs with other isoelectronic dopants (e.g. aluminium). Large In concentrations lead to the formation of the ternary compound In_xGa_(1-x)Sb as revealed by CL spectra and x-ray measurements. In particular, a luminescence band and x-ray diffraction peaks observed in highly doped samples are attributed to the presence of In_xGa_(1-x)Sb.
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© 1999 IOP Publishing Ltd. This work has been supported by the DGES (project No PB96-0639) and CICYT (projects ESP95-0148 and ESP98-1340).
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