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Effect of In doping in GaSb crystals studied by cathodoluminescence



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Hidalgo Alcalde, Pedro and Méndez Martín, Bianchi and Piqueras de Noriega, Javier and Dutta, P: S. and Dieguez, E. (1999) Effect of In doping in GaSb crystals studied by cathodoluminescence. Semiconductor Science and Technology, 14 (10). pp. 901-904. ISSN 0268-1242

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Official URL: http://iopscience.iop.org/0268-1242/14/10/304



The luminescence properties of In doped GaSb single crystals have been studied by the cathodoluminescence (CL) technique in the scanning electron microscope. It has been found that indium induces a certain reduction on the native acceptor concentration in contrast to what occurs with other isoelectronic dopants (e.g. aluminium). Large In concentrations lead to the formation of the ternary compound In_xGa_(1-x)Sb as revealed by CL spectra and x-ray measurements. In particular, a luminescence band and x-ray diffraction peaks observed in highly doped samples are attributed to the presence of In_xGa_(1-x)Sb.

Item Type:Article
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© 1999 IOP Publishing Ltd.
This work has been supported by the DGES (project No PB96-0639) and CICYT (projects ESP95-0148 and ESP98-1340).

Uncontrolled Keywords:Gallium Antimonide
Subjects:Sciences > Physics > Materials
ID Code:24673
Deposited On:14 Mar 2014 17:38
Last Modified:06 Jun 2014 13:52

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