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Scanning tunneling spectroscopy study of erbium doped GaSb crystals

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Hidalgo Alcalde, Pedro and Méndez Martín, Bianchi and Piqueras de Noriega, Javier and Plaza, J. L. and Dieguez, E. (1999) Scanning tunneling spectroscopy study of erbium doped GaSb crystals. Journal of Applied Physics, 86 (3). pp. 1449-1451. ISSN 0021-8979

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Official URL: http://jap.aip.org/resource/1/japiau/v86/i3/p1449_s1


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Abstract

Er doped GaSb single crystals have been studied by scanning tunneling spectroscopy (STS) and cathodoluminescence (CL) in a combined scanning electron microscope-scanning tunnelling microscope system. The surface band gap in doped samples has been found to be about 0.5 eV while in undoped crystals the gap is close to the bulk value. Inhomogeneities in the local electronic properties of the doped crystals are studied by a correlation of the CL images and STS data.


Item Type:Article
Additional Information:

© 1999 American Institute of Physics.
This work was supported by DGES (Project No. PB96-0639) and by CICYT (Project Nos. ESP95-0148 and ESP98-1340)

Uncontrolled Keywords:Phase Epitaxy, Cathodoluminescence, Photoluminescence, Microscopy, Excitation
Subjects:Sciences > Physics > Materials
ID Code:24675
Deposited On:14 Mar 2014 17:35
Last Modified:06 Jun 2014 17:52

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