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Cathodoluminescence enhancement in porous silicon cracked in vacuum

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Rams, J. and Méndez Martín, Bianchi and Craciun, G. and Plugaru, R. and Piqueras de Noriega, Javier (1999) Cathodoluminescence enhancement in porous silicon cracked in vacuum. Applied physics Letters, 74 (12). pp. 1728-1730. ISSN 0003-6951

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Official URL: http://apl.aip.org/resource/1/applab/v74/i12/p1728_s1


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Abstract

An increase of the cathodoluminescence (CL) signal of porous silicon (PS) cracked in vacuum of up to three orders of magnitude has been achieved. Under high electron-beam currents, the samples cracked in interconnected pieces of tens of microns, exposing new surfaces to the electron beam. This treatment enhances the radiative intensity in PS associated with a broadband peaked at 720 nm, which is highly stable while the sample is kept in vacuum. Cross-sectional CL observations show that most of the light is generated in the top surface of the porous layer. The spectral depth dependence of the emitted light reveals a relatively weak blue emission in the region closer to the substrate.


Item Type:Article
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© 1999 American Institute of Physics.
This work was supported by the DGES (Project No.PB96-0639) and by the Scientific Cooperation Programme between Spain and Romania.

Uncontrolled Keywords:Electron-Beam Irradiation, Luminescence Properties, Photoluminescence, Microscopy, States, Si
Subjects:Sciences > Physics > Materials
ID Code:24677
Deposited On:18 Mar 2014 16:05
Last Modified:18 Mar 2014 16:05

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