Publication: Cathodoluminescence enhancement in porous silicon cracked in vacuum
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1999-03-22
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Amer Inst Physics
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Abstract
An increase of the cathodoluminescence (CL) signal of porous silicon (PS) cracked in vacuum of up to three orders of magnitude has been achieved. Under high electron-beam currents, the samples cracked in interconnected pieces of tens of microns, exposing new surfaces to the electron beam. This treatment enhances the radiative intensity in PS associated with a broadband peaked at 720 nm, which is highly stable while the sample is kept in vacuum. Cross-sectional CL observations show that most of the light is generated in the top surface of the porous layer. The spectral depth dependence of the emitted light reveals a relatively weak blue emission in the region closer to the substrate.
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© 1999 American Institute of Physics.
This work was supported by the DGES (Project No.PB96-0639) and by the Scientific Cooperation Programme between Spain and Romania.
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