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Microwave noise modeling of InP based MODFETs biased for low power consumption

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Miranda Pantoja, José Miguel y Sebastián Franco, José Luis (2000) Microwave noise modeling of InP based MODFETs biased for low power consumption. IEEE Microwave and Guided Wave Letters, 10 (11). pp. 469-471. ISSN 1051-8207

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URL Oficial: http://dx.doi.org/10.1109/75.888835


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This paper presents the fabrication, experimental characterization and modeling of 0.15 mum gate-length lattice matched MODFETs based on InP technology. The variation of the drain noise temperature of the Pospieszalski model (T-D) with the applied bias has been investigated under very low power consumption conditions, and a noticeably complex dependence of this factor on the drain current has been observed, In fact, T-D can decrease with increasing drain currents, and suffers a strong increase as a function of the drain voltage even at very low values of the drain current. However, all of these effects can be qualitatively explained from physical considerations.


Tipo de documento:Artículo
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© 2000 IEEE.

Palabras clave:Gate.
Materias:Ciencias > Física > Electricidad
Ciencias > Física > Electrónica
Código ID:24709
Depositado:18 Mar 2014 09:58
Última Modificación:10 Dic 2018 14:58

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