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Plaza, J. L. and Hidalgo Alcalde, Pedro and Méndez Martín, Bianchi and Piqueras de Noriega, Javier and Castaño, J. L. and Dieguez, E. (1999) Effect of Er dopant in GaSb bulk crystals grown by vertical Bridgman technique. Journal of crystal growthJ, 198 (pt. 1). pp. 379-383. ISSN 0022-0248
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Official URL: http://www.sciencedirect.com/science/article/pii/S0022024898011002
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http://www.sciencedirect.com | UNSPECIFIED |
Abstract
The distribution of Er in bulk GaSb ingots grown by vertical Bridgman technique has been investigated for different concentrations. The resistivity, mobility and carrier density were analysed. The formation of Er-Sb compounds and the incorporation of Er at subgrain boundaries has been shown by cathodoluminescence studies.
Item Type: | Article |
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Additional Information: | © 1999 Elsevier Science B.V. |
Uncontrolled Keywords: | Liquid-Phase Epitaxy, Gallium Antimonide, Longitudinal Macrosegregation, Thermal-Convection, Erbium, Gaas, Photoluminescence |
Subjects: | Sciences > Physics > Materials |
ID Code: | 24710 |
Deposited On: | 18 Mar 2014 16:25 |
Last Modified: | 06 Jun 2014 13:51 |
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