Universidad Complutense de Madrid
E-Prints Complutense

Noise performance of submicron HEMT channels under low power consumption operation

Impacto

Descargas

Último año



Miranda Pantoja, José Miguel y Sebastián Franco, José Luis (2000) Noise performance of submicron HEMT channels under low power consumption operation. In IEEE MTT-S International Microwave Symposium Digest. IEEE, Boston, USA, pp. 1233-1236. ISBN 0-7803-5687-X

[img] PDF
Restringido a Sólo personal autorizado del repositorio

293kB

URL Oficial: http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=863582


URLTipo de URL
http://ieeexplore.ieee.orgEditorial


Resumen

We have investigated the noise performance of HEMT devices for low noise operation with the aim of developing a noise model valid for low power biasing. Analytical expressions useful for CAD models have been derived for the calculation of the Pospieszalski gate and drain temperatures, and have been verified from near pinchoff conditions up to usual bias voltages. An overshoot in the drain temperature as a function of the drain voltage has been observed at low drain currents in deep submicron gate lenght devices.


Tipo de documento:Sección de libro
Información Adicional:

IEEE MTT-S International Microwave Symposium (IMS2000) (2000. Boston, USA). © 2000 IEEE. This work has partially been funded by the Swedish Foundation for Scientific Research through the project "Design of 60 GHz WLANs". Paulius Sakalas, Christian Fager, and Ilcho Angelov are acknowledged for their valuable comments.

Palabras clave:Models.
Materias:Ciencias > Física > Electricidad
Ciencias > Física > Electrónica
Código ID:24712
Depositado:18 Mar 2014 10:10
Última Modificación:10 Dic 2018 14:58

Descargas en el último año

Sólo personal del repositorio: página de control del artículo