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Noise performance of submicron HEMT channels under low power consumption operation



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Miranda Pantoja, José Miguel y Sebastián Franco, José Luis (2000) Noise performance of submicron HEMT channels under low power consumption operation. In IEEE MTT-S International Microwave Symposium Digest. IEEE, Boston, USA, pp. 1233-1236. ISBN 0-7803-5687-X

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We have investigated the noise performance of HEMT devices for low noise operation with the aim of developing a noise model valid for low power biasing. Analytical expressions useful for CAD models have been derived for the calculation of the Pospieszalski gate and drain temperatures, and have been verified from near pinchoff conditions up to usual bias voltages. An overshoot in the drain temperature as a function of the drain voltage has been observed at low drain currents in deep submicron gate lenght devices.

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IEEE MTT-S International Microwave Symposium (IMS2000) (2000. Boston, USA). © 2000 IEEE. This work has partially been funded by the Swedish Foundation for Scientific Research through the project "Design of 60 GHz WLANs". Paulius Sakalas, Christian Fager, and Ilcho Angelov are acknowledged for their valuable comments.

Palabras clave:Models.
Materias:Ciencias > Física > Electricidad
Ciencias > Física > Electrónica
Código ID:24712
Depositado:18 Mar 2014 10:10
Última Modificación:10 Dic 2018 14:58

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