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Impurity segregation in Al doped GaSb studied by cathodoluminescence microscopy

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Hidalgo Alcalde, Pedro and Méndez Martín, Bianchi and Piqueras de Noriega, Javier and Dutta, P. S. (1998) Impurity segregation in Al doped GaSb studied by cathodoluminescence microscopy. In Defect and Impurity Engineered semiconductors II. MRS Online Proceedings Library (510). Materials Research Society, pp. 639-644. ISBN 1-55899-416-5

Official URL: http://dx.doi.org/10.1557/PROC-510-639


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Abstract

Cathodoluminescence (CL) in the scanning electron microscope (SEM) has been used to investigate the effect of doping with an isoelectronic dopant, aluminum, on the native accepters and on the general structure of extended defects of gallium antimonide single crystals. While there is no significant change in the native defect content, decoration of non-radiative recombination centers or extended defects occurs as a result of aluminum doping.


Item Type:Book Section
Additional Information:

© Materials Research Society.
Symposium on Defect and Impurity Engineered Semiconductors II at the Materials-Research-Society Spring Meeting (1998. San Francisco, California).

Uncontrolled Keywords:Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Materials Science, Coatings & Films
Subjects:Sciences > Physics > Materials
ID Code:24741
Deposited On:20 Mar 2014 18:18
Last Modified:06 Jun 2014 17:35

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