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Influence of the minimization of self-scattering events on the Monte Carlo simulation of carrier transport in III-V semiconductors

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Miranda Pantoja, José Miguel y Sebastián Franco, José Luis (1999) Influence of the minimization of self-scattering events on the Monte Carlo simulation of carrier transport in III-V semiconductors. Semiconductor Science and Technology, 14 (9). pp. 804-808. ISSN 0268-1242

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URL Oficial: http://dx.doi.org/10.1088/0268-1242/14/9/310


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This paper presents a procedure to improve the algorithm of Sangiorgi, Ricco and Venturi for the calculation of the time of flight in Monte Carlo simulations. The method is used to efficiently optimize the step function in which the total scattering probability is discretized. The optimization criterion suggested in this work can reduce the self-scattering events to less than 30% in a fairly wide range of temperatures, applied fields and doping levels. Different examples are presented to illustrate the advantages of the method.


Tipo de documento:Artículo
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© 1999 IOP Publishing Ltd. This work has been funded by the European Community through programme TMR (project ERBFMRXCT960050). The authors wish to thank Dr Tomás González from the University of Salamanca for his helpful comments.

Palabras clave:Technologically Significant Semiconductors, Schotiky-Barrier Diodes, Zincblende Structures, Noise, Diamond, Spectra, Devices.
Materias:Ciencias > Física > Electricidad
Ciencias > Física > Electrónica
Código ID:24742
Depositado:19 Mar 2014 09:24
Última Modificación:23 Oct 2015 15:40

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