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Influence of the minimization of self-scattering events on the Monte Carlo simulation of carrier transport in III-V semiconductors

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Miranda Pantoja, José Miguel and Sebastián Franco, José Luis (1999) Influence of the minimization of self-scattering events on the Monte Carlo simulation of carrier transport in III-V semiconductors. Semiconductor Science and Technology, 14 (9). pp. 804-808. ISSN 0268-1242

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Official URL: http://dx.doi.org/10.1088/0268-1242/14/9/310


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Abstract

This paper presents a procedure to improve the algorithm of Sangiorgi, Ricco and Venturi for the calculation of the time of flight in Monte Carlo simulations. The method is used to efficiently optimize the step function in which the total scattering probability is discretized. The optimization criterion suggested in this work can reduce the self-scattering events to less than 30% in a fairly wide range of temperatures, applied fields and doping levels. Different examples are presented to illustrate the advantages of the method.


Item Type:Article
Additional Information:

© 1999 IOP Publishing Ltd. This work has been funded by the European Community through programme TMR (project ERBFMRXCT960050). The authors wish to thank Dr Tomás González from the University of Salamanca for his helpful comments.

Uncontrolled Keywords:Technologically Significant Semiconductors, Schotiky-Barrier Diodes, Zincblende Structures, Noise, Diamond, Spectra, Devices.
Subjects:Sciences > Physics > Electricity
Sciences > Physics > Electronics
ID Code:24742
Deposited On:19 Mar 2014 09:24
Last Modified:10 Dec 2018 14:58

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