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Microwave noise measurements on Al0.3Ga0.7As/GaAs channels grown by molecular beam epitaxy using As-2 and As-4

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Miranda Pantoja, José Miguel and Sebastián Franco, José Luis (1998) Microwave noise measurements on Al0.3Ga0.7As/GaAs channels grown by molecular beam epitaxy using As-2 and As-4. Semiconductor Science and Technology, 13 (7). pp. 833-836. ISSN 0268-1242

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Official URL: http://dx.doi.org/10.1088/0268-1242/13/7/002


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Abstract

We present microwave noise measurements performed on different high electron mobility transistor channels under both darkness and illumination. Two structures of Alo(0.3)Gao(0.7)As/GaAs layers have been grown with beams of Asp and As-4 using molecular beam epitaxy. The measured room temperature, Hall mobilities and sheet carrier densities have demonstrated in both cases a good de performance of the channels. However, the measurement of the noise temperature at 1.5 GHz has shown the sample grown with As-4 to be considerably noisier than the one grown with AS(4).


Item Type:Article
Additional Information:

© 1998 IOP Publishing Ltd. This work was funded by the European Union Commission under the TMR program ERBFMRXCT960050. The MBE system and the technological work were supported by the Deutsche Forschungsgemeinschaft (SFB 241-IMES) and by the European Union within the Copernicus programme, project COP 94/01180. Thanks are due to Michael
Brandt and Chih-I Lin for their helpful comments.

Uncontrolled Keywords:Dimensional Electron-Gas, Doped Heterostructures, Gaas, Velocity, Modfet, Bulk.
Subjects:Sciences > Physics > Electricity
Sciences > Physics > Electronics
ID Code:24743
Deposited On:19 Mar 2014 09:28
Last Modified:10 Dec 2018 14:58

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