Publication: Microwave noise measurements on Al0.3Ga0.7As/GaAs channels grown by molecular beam epitaxy using As-2 and As-4
Loading...
Official URL
Full text at PDC
Publication Date
1998-07
Advisors (or tutors)
Editors
Journal Title
Journal ISSN
Volume Title
Publisher
Iop Publishing Ltd
Citations
Exportar
Abstract
We present microwave noise measurements performed on different high electron mobility transistor channels under both darkness and illumination. Two structures of Alo(0.3)Gao(0.7)As/GaAs layers have been grown with beams of Asp and As-4 using molecular beam epitaxy. The measured room temperature, Hall mobilities and sheet carrier densities have demonstrated in both cases a good de performance of the channels. However, the measurement of the noise temperature at 1.5 GHz has shown the sample grown with As-4 to be considerably noisier than the one grown with AS(4).
Description
© 1998 IOP Publishing Ltd. This work was funded by the European Union Commission under the TMR program ERBFMRXCT960050. The MBE system and the technological work were supported by the Deutsche Forschungsgemeinschaft (SFB 241-IMES) and by the European Union within the Copernicus programme, project COP 94/01180. Thanks are due to Michael
Brandt and Chih-I Lin for their helpful comments.
UCM subjects
Unesco subjects
Keywords
Citation
[1] Zeldov, E., Majer, D., Konczykowski, M., Larkin, A.I., Vinokur, V.M., Geshkenbein, V.B., Chikumoto, N., Shtrikman, H., 1995, Europhys. Lett., 30, 367–72.
[2] Cappy, A., Vanoverschelde, A., Schortgen, M., Versnaeyen, C., Salmer, G., 1985, IEEE Trans. Electron Devices, 32, 2787–95.
[3] Pospieszalski, M., 1989, IEEE Trans. Microwave Theory and Techniques, 37, 1340–50.
[4] "On the Use of Dimeric Arsenic in Solid Source MBE", Application note edited by EPI, August/September 1993 and references therein.
[5] Neave, J.H., Blood, P., Joyce, B.A., 1980, Appl. Phys. Lett., 36, 311–12.
[6] Miller, J.W., Low, T.S., 1991, J. Crystal Growth, 111, 30–8.
[7] Chand, N., Harris, T.D., Chu, S.N.G., Fitzgerald, E.A., Lopata, J., Schnoes, M., Dutta, N.K., 1993, J. Crystal Growth, 126, 530–38.
[8] Lee, K., Shur, M., Drummond, T., Morkoc, H., 1983, J. Appl. Phys., 54, 2093–96.
[9] Jin, Y., 1991, Solid-State Electron., 34, 117–21.
[10] Ikossi-Anastasiou, K., et al, 1988, IEEE Trans. Electron Devices, 35, 1788–92.
[11] Masselink, W.T., 1989, Semicond. Sci. Technol., 4, 503–12.
[12] Masselink, W.T., Braslau, N., Wang, W.I., Wright, S.L., 1987, Appl. Phys. Lett., 51, 1533–35.
[13] Gasquet, D., Vaissiere, J.C., Nougier, J.P., 1981, 6th Int. Conf. on Noise in Physical Systems (Washington DC, USA), ed P.H.E Meijer, R.D. Mountain and R.J. Soulen Jr, NBS Special Publication, vol 614, pp 305–7.
[14] Palczewski, S., Jelenski, A., Grüb, A., Hartnagel, H.L., 1992, IEEE Microwave and Guided Wave Lett., 2, 442–4.
[15] Miranda, J.M., Grüb, A., Krozer, V., Sebastián, J.L., 1995, IEEE Trans. Instrumentation and Measurement, 44, 853–9.
[16] Kirtley, J.R., Theis, T.N., Mooney, P.M., Wright, S.L., 1988, J. Appl. Phys., 63, 1541–8.