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Monte Carlo simulation of electron velocity in degenerate GaAs

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Miranda Pantoja, José Miguel and Sebastián Franco, José Luis (1997) Monte Carlo simulation of electron velocity in degenerate GaAs. IEEE Electron Device Letters, 18 (6). pp. 258-260. ISSN 0741-3106

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Official URL: http://dx.doi.org/10.1109/55.585347


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Abstract

A calculation of the electron velocity in heavily doped GaAs has been performed. A model to account for the LO phonon-plasmon coupling effects is proposed in a full Monte Carlo simulator; we believe this is the first time this fact has been tried out, Nonequilibrium screening effects are considered in the simulation. The Pauli exclusion principle is extended to the hot electron regime by the use of the electron temperature, which is calculated self consistently from the mean energy, A direct comparison with experimental velocities is made to show the accuracy of the simulation at both 77 and 300 K. Comparisons with simpler Monte Carlo models are also presented to illustrate the influence of the different effects considered in this letter.


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© 1997 IEEE. The authors wish to express their appreciation to Prof. D. Pardo and Dr. T. González from the University of Salamanca for their interesting conversations. They are also grateful to Prof. W. Ted Masselink from the Humboldt University of Berlin for his useful comments. Dr. M. Fischetti from the IBM Watson Research Center of New York is acknowledged for his highly valuable suggestions. Finally, they would like to thank H. Buck for her special attention to the grammar of the manuscript.

Uncontrolled Keywords:Technologically Significant Semiconductors, Deformation Potentials, Zincblende Structures, Transport, Scattering, Diamond.
Subjects:Sciences > Physics > Electricity
Sciences > Physics > Electronics
ID Code:24745
Deposited On:19 Mar 2014 09:35
Last Modified:10 Dec 2018 14:58

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