Universidad Complutense de Madrid
E-Prints Complutense

Monte Carlo simulation of microwave noise temperature in cooled GaAs and InP

Impacto

Descargas

Último año

Miranda Pantoja, José Miguel y Sebastián Franco, José Luis (2000) Monte Carlo simulation of microwave noise temperature in cooled GaAs and InP. IEEE Transactions on Microwave Theory and Techniques, 48 (7, P.2). pp. 1275-1279. ISSN 0018-9480

[img] PDF
Restringido a Sólo personal autorizado del repositorio

75kB

URL Oficial: http://dx.doi.org/10.1109/22.853472


URLTipo de URL
http://ieeexplore.ieee.orgEditorial


Resumen

A simulation at microscopic level of the intrinsic microwave noise temperature associated to GaAs and InP semiconductors under far from equilibrium conditions has been performed. The dependence of the noise temperature on the electric field, doping level, and physical temperature has been investigated, and the results show the existence of threshold fields above which electron heating and partition noise due to intervalley scattering can make the cooling inefficient in terms of noise improvements. A comparison with available experimental data has also been made to verify the accuracy of the models used in the simulation.


Tipo de documento:Artículo
Información Adicional:

© 2000 IEEE.

Palabras clave:Schottky-Barrier Diodes, Hot-Electron Noise, Semiconductors, Transport, Spectra, Mesfet.
Materias:Ciencias > Física > Electricidad
Ciencias > Física > Electrónica
Código ID:24774
Depositado:20 Mar 2014 10:41
Última Modificación:23 Oct 2015 15:48

Descargas en el último año

Sólo personal del repositorio: página de control del artículo