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Decoration of extended defects in GaSb by Al doping as evidenced by cathodoluminescence studies

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Hidalgo Alcalde, Pedro and Méndez Martín, Bianchi and Piqueras de Noriega, Javier and Dutta, P.S. and Diéguez, E. (1998) Decoration of extended defects in GaSb by Al doping as evidenced by cathodoluminescence studies. Solid State Communications, 108 (12). pp. 997-1000. ISSN 0038-1098

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Official URL: http://www.sciencedirect.com/science/article/pii/S0038109898004451


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Abstract

The effect of aluminium on the defect structure of GaSb crystals, grown by the vertical Bridgman technique, has been investigated by cathodoluminescence (CL) in the scanning electron microscope. Crystals have been found to be highly homogeneous along the growth axis with the exception of the top end which showed Al accumulation. The CL results show decoration of extended defects by Al but contrary to the case of other dopants Al has not been found to cause a significative reduction of native accepters. A CL band at about 850 meV appears to be related to the presence of aluminium.


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© 1998 Elsevier Science Ltd. All rights reserved.
Acknowledgements—GrowtThis work was supported by DGES (PB96-0639) and by CICYT (ESP95-0148 and 95-0086-OP).

Uncontrolled Keywords:Liquid-Phase Epitaxy, Gallium Antimonide, Doped Gasb, Growth
Subjects:Sciences > Physics > Materials
ID Code:24776
Deposited On:20 Mar 2014 18:22
Last Modified:06 Jun 2014 13:48

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