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Spatial-distribution of recombination centers in gaaste - effects of the doping level

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Castaldini, A. and Calvallini, A,. and Fraboni, B and Méndez Martín, Bianchi and Piqueras de Noriega, Javier (1994) Spatial-distribution of recombination centers in gaaste - effects of the doping level. Journal of Applied Physics, 76 (2). pp. 987-992. ISSN 0021-8979

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Official URL: http://dx.doi.org/10.1063/1.357783


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Abstract

The distribution in liquid-encapsulated-Czochralski (LEC) GaAs:Te wafers of point and complex defects has been investigated together with their influence on the minority-carrier diffusion length L. Three wafers with different Te-doping concentration (2.2 X 10(17), 4.5 X 10(17), and 1.5 X 10(18) cm-3) have been studied by means of the electron-beam-induced-current (EBIC) mode of scanning electron microscopy and of the surface photovoltage (SPV) method. The morphology and electrical activity of the defects observed across each wafer have been correlated to the formation and distribution of deep electronic levels, which are significantly affected by the tellurium concentration. The diffusion length has been found to be mainly controlled by deep levels associated with dislocations. EBIC localized measurements of L and of the net ionized free-carrier concentration provide evidence for the influence of Te concentration on impurity segregation at complex defects.


Item Type:Article
Additional Information:

© 1994 American institute of Physics.
This work was supported by the Comision Interministerial de Ciencia y Tecnologia (Project No. PB90-1017) and by the Italian MURST. The authors wish to thank Wacker-Chemitronic (Dr. K. L6hnert) for providing the samples.

Uncontrolled Keywords:Te Wafers, Cathodoluminescence, Defects
Subjects:Sciences > Physics > Materials
ID Code:24857
Deposited On:02 Apr 2014 15:02
Last Modified:02 Apr 2014 15:02

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