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Study of defects in implanted GaAs - te by cathodoluminescence

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Méndez Martín, Bianchi and Piqueras de Noriega, Javier and Cavallini, A. and Fraboni, B. (1994) Study of defects in implanted GaAs - te by cathodoluminescence. Materials Science and Engineering B-Solid State Materials for Advanced Technology, 24 (1-mar). pp. 138-140. ISSN 0921-5107

Official URL: http://dx.doi.org/10.1016/0921-5107(94)90315-8


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Abstract

Evidence for IR cathodoluminescence (CL) at 1.2 and 1.0 eV in Te-doped GaAs in the temperature range 80-300 K has been obtained. The evolution of CL intensity and half-width of emission bands after silicon implantation and annealing has been investigated. The increase in the CL intensity with implantation dose after heat treatment supports the association of Si and/or Te with the radiation-induced Ga vacancies to form Si(Ga) or Te(Ga) defects.


Item Type:Article
Additional Information:

© Elsevier Science SA Lausanne.
International Workshop on Beam Injection Assessment of Defects in Semiconductors (BIADS 93) - A NATO Advanced Research Workshop (3. 1993. Bolonia, Italia)

Uncontrolled Keywords:Materials Science, Multidisciplinary, Physics, Condensed Matter
Subjects:Sciences > Physics > Materials
ID Code:24925
Deposited On:02 Apr 2014 15:39
Last Modified:02 Apr 2014 15:39

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