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Stark ladders in periodically si-delta-doped gaas

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Méndez Martín, Bianchi and Domínguez-Adame Acosta, Francisco (1994) Stark ladders in periodically si-delta-doped gaas. Physical Review B, 49 (16). pp. 11471-11474. ISSN 0163-1829

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Official URL: http://prb.aps.org/abstract/PRB/v49/i16/p11471_1


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Abstract

We study theoretically the electronic structure of periodically Si delta-doped GaAs subject to a homogeneous electric field applied along the growth direction. The space-charge potential due to delta doping is obtained by means of the Thomas-Fermi approach. Analyzing the change in the density of states in the superlattice introduced in the electric field, we observe a set of equally-spaced sharp peaks corresponding to Stark-ladder resonances. Intrinsic broadening of resonances turns out to be smaller than the level spacing in the whole range of the electric field we consider. We use the inverse participation ratio to evaluate the spatial extent of electron wave functions, and we find that the Stark-ladder spectrum is related to a strong-localization regime at high field.


Item Type:Article
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© 1994 The American Physical Society.
The authors thank A. Sanchez and E. Macia for valuable discussions.

Uncontrolled Keywords:Semiconductor Superlattices, Localization
Subjects:Sciences > Physics > Materials
ID Code:24955
Deposited On:09 Apr 2014 16:11
Last Modified:09 Feb 2018 15:10

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