Universidad Complutense de Madrid
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Influence of defects on diffusion length inhomogeneity in gaas-te wafers

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Castaldini, A. and Cavallini, A. and Fraboni, B and Piqueras de Noriega, Javier and Méndez Martín, Bianchi (1994) Influence of defects on diffusion length inhomogeneity in gaas-te wafers. In Defect Recognition and Image Processing in Semiconductors and Devices. Conference Series- Institute of Physics (135). IOP Publishing LTD, pp. 207-210. ISBN 0-7503-0294-1



Abstract

Homogeneity, distribution and nature of defects in GaAs:Te wafers with different doping concentrations have been investigated by SPV (Surface PhotoVoltage) and EBIC (Electron Beam Induced Current) methods. The resulting radial distribution of the minority carrier diffusion length L across each wafer has been correlated with the profiles obtained for dislocation density and N-D-N-A. By comparing the present results with previous cathodoluminescence analyses (Mendez et al. 1988, Mendez et al. 1991), it is suggested that dislocations and dislocation related centres determine the L values.


Item Type:Book Section
Additional Information:

© IOP Publishing LTD.
International Conference on Defect Recognition and Image Processing in Semiconductors and Devices (5. 1993. Santander)

Uncontrolled Keywords:Cathodoluminescence
Subjects:Sciences > Physics > Materials
ID Code:25028
Deposited On:09 Apr 2014 16:44
Last Modified:09 Apr 2014 16:44

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