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Scanning electron acoustic microscopy of indium-doped semi-insulating GaAs

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Méndez Martín, Bianchi and Piqueras de Noriega, Javier (1993) Scanning electron acoustic microscopy of indium-doped semi-insulating GaAs. Semiconductor Science and Technology, 8 (3). pp. 320-321. ISSN 0268-1242

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Official URL: http://iopscience.iop.org/0268-1242/8/3/002


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Abstract

Dislocation lines in {110} sections of In-doped GaAs are imaged by scanning electron acoustic microscopy (SEAM). Cathodoluminescence measurements show the presence of a high indium concentration at dislocations. It is proposed that the semi-insulating property of the sample and dislocation decoration contribute to the SEAM contrast.


Item Type:Article
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© 1993 IOP Publishing Ldt.
This work was supported by the Volkswgen Foundation and by DGICYT (Project PB 92-1017).

Uncontrolled Keywords:Dislocations, Behavior
Subjects:Sciences > Physics > Materials
ID Code:25042
Deposited On:09 Apr 2014 16:52
Last Modified:09 Apr 2014 16:52

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