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Application of scanning electron acoustic microscopy to the characterization of n-type and semiinsulating GaAs

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Méndez Martín, Bianchi and Piqueras de Noriega, Javier (1992) Application of scanning electron acoustic microscopy to the characterization of n-type and semiinsulating GaAs. Applied Physics Letters, 60 (11). pp. 1357-1359. ISSN 0003-6951

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Official URL: http://dx.doi.org/10.1063/1.107485


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Abstract

A series of GaAs wafers with different doping levels and electrical resistivity has been used to investigate the scanning electron acoustic microscopy (SEAM) application to the characterization of this material. It has been found that SEAM is particularly useful to characterize semi-insulating GaAs as compared with n-type material. The SEAM signal generation mechanisms in GaAs are discussed.


Item Type:Article
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©2001. All Rights Reserved.
This work was supported by the Volkswagen Foundation, by the Comision Interministerial de Ciencia y Tecnologia (Project MAT 90-47) and by DGICYT-DAAD. The authors thank Wacker-Chemitronic (Doctor K. Lohnert ) for providing the samples.

Uncontrolled Keywords:Signal
Subjects:Sciences > Physics > Materials
ID Code:25071
Deposited On:11 Apr 2014 17:24
Last Modified:11 Apr 2014 17:24

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