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Influence of te concentration on the infrared cathodoluminescence of GaAs:Te wafers

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Méndez Martín, Bianchi and Piqueras de Noriega, Javier (1991) Influence of te concentration on the infrared cathodoluminescence of GaAs:Te wafers. Journal of Applied Physics, 69 (5). pp. 2776-2779. ISSN 0021-8979

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Official URL: http://dx.doi.org/10.1063/1.348636


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Abstract

Cathodoluminescence (CL) scanning electron microscopy has been used to investigate the nature and distribution of defects involved in the infrared emission of GaAs:Te wafers. Spectral and CL-contrast changes as a function of doping level have been found. Profiles of infrared CL intensity across the wafers show an inverted U shape.


Item Type:Article
Additional Information:

© 1991 American institute of Physics.
This work was supported by the Comision Interministerial de Ciencia y Tecnologia (Project PB86-015 1) and by DGlCYT-DAAD. The authors thank Wacker-Chemitronic (Dr. K. Liihnert) for providing the samples

Uncontrolled Keywords:Spatial-Distribution
Subjects:Sciences > Physics > Materials
ID Code:25088
Deposited On:24 Apr 2014 16:15
Last Modified:24 Apr 2014 16:15

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