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Cathodoluminescence and positron-annihilation study of defect distribution in III-V wafers

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Domínguez-Adame Acosta, Francisco and Méndez Martín, Bianchi and Piqueras de Noriega, Javier and De Diego, N. and LLopis, J. and Moser, P. (1989) Cathodoluminescence and positron-annihilation study of defect distribution in III-V wafers. Revue de Physique Appliquee, 24 (6). p. 179. ISSN 0035-1687

Official URL: http://dx.doi.org/10.1051/jphyscol:1989633




Abstract

Positron annihilation (PA) is a sensitive technique for detection of vacancy-type defects in crystals, that has been widely used in recent years to study defects in semiconductors (1). On the other side, CL and other luminescence techniques have been applied (2) to study the defect distribution in semiconductor wafers. In some cases PA can be useful to interpret results obtained by CL-SEM (3). In this work PA and CL have been used to investigate the distribution and nature of defects in GaP : S, GaAs : Te and undoped SI GaAs wafers. CL intensity, dislocation density and vacancy concentration profiles have been measured. The latter has been obtained by positron lifetime measurements.


Item Type:Article
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© Editions Physique

Uncontrolled Keywords:Physics, Multidisciplinary
Subjects:Sciences > Physics > Materials
ID Code:25122
Deposited On:24 Apr 2014 16:34
Last Modified:13 Nov 2014 08:49

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