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Uniformity characterization of SI-GaAs by cathodoluminescence and scanning electron acoustic microscopy

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Méndez Martín, Bianchi and Piqueras de Noriega, Javier (1989) Uniformity characterization of SI-GaAs by cathodoluminescence and scanning electron acoustic microscopy. In Microscopy of Semiconducting Materials 1989. Institute of Physics Conference Series (100). IOP Publishing LTD, pp. 789-794. ISBN 0-85498-056-3



Abstract

The capabilities of SEAM in uniformity assessment of SI GaAs are investigated. Profiles of SEAM signals across the wafer and SEAM images of dislocation distribution are obtained. Part of the nonlinear signal shows a profile that is not related to dislocation distribution.


Item Type:Book Section
Additional Information:

© IOP Publishing LTD.
Conference on Microscopy of Semiconducting Materials (1989. Oxford)

Uncontrolled Keywords:Lec Gaas, Semiconductors
Subjects:Sciences > Physics > Materials
ID Code:25128
Deposited On:24 Apr 2014 16:44
Last Modified:24 Apr 2014 16:44

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