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Spatial-distribution of defects in GaAs: Te wafers studied by cathodoluminescence

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Méndez Martín, Bianchi and Piqueras de Noriega, Javier and Domínguez-Adame Acosta, Francisco and De Diego, N. (1988) Spatial-distribution of defects in GaAs: Te wafers studied by cathodoluminescence. Journal of Applied Physics, 64 (9). pp. 4466-4468. ISSN 0021-8979

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Official URL: http://dx.doi.org/10.1063/1.341269


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Abstract

Cathodoluminiscence (CL) scanning electron microscopy and positron annihilation techniques have been used to investigate the distribution of defects in GaAs: Te wafers. Dislocation density and near-band-edge CL profiles along the wafer have different shapes. positron lifetime measurements do not show spatial changes of vacancy concentration in the wafers, but a higer vacancy concentration has been detected in the Te-doped samples relative to SI samples. Results are discussed in terms of vacancies and impurity vacancy complexes.


Item Type:Article
Additional Information:

© 1988 Amer Inst Physics.
The authors thank Wacker-Chemitronic (Dr K. Löhnert) for providing the samples. The help of Dr. J. Llopis during this work is acknowledged. This work was partially supported by Comisión Interministerial de Ciencia y Tecnología (Project No. PB86-0151).

Uncontrolled Keywords:Physics, Applied
Subjects:Sciences > Physics > Materials
ID Code:25136
Deposited On:24 Apr 2014 16:54
Last Modified:13 Feb 2018 13:44

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