Universidad Complutense de Madrid
E-Prints Complutense

Electronic-structure of fibonacci Si δ-doped GaAs

Impacto

Downloads

Downloads per month over past year

Domínguez-Adame Acosta, Francisco and Maciá Barber, Enrique Alfonso and Méndez Martín, Bianchi (1994) Electronic-structure of fibonacci Si δ-doped GaAs. Physics Letters A, 194 (3). pp. 184-190. ISSN 0375-9601

[img] PDF
Restringido a Repository staff only

1MB
[img]
Preview
PDF
111kB

Official URL: http://dx.doi.org/10.1016/0375-9601(94)90295-X




Abstract

We study the electronic structure of a new type of Fibonacci superlattice based on Si delta-doped GaAs. Assuming that delta-doped layers are equally spaced, quasiperiodicity is introduced by selecting two different donor concentrations and arranging them according to the Fibonacci series along the growth direction. The one-electron potential due to delta-doping is obtained by means of the Thomas-Fermi approach. The resulting energy spectrum is then found by solving the corresponding effective-mass wave equation. We find that a self-similar spectrum can be seen in the band structure. Electronic transport properties of samples are also discussed and related to the degree of spatial localization of electronic envelope functions.


Item Type:Article
Additional Information:

© Elsevier Science BV.
The authors thank A. Sánchez for a critical reading of the manuscript. This work has been partially supported by Univeridad Complutense under project PR161/93-4811.

Uncontrolled Keywords:Quasi-Periodic Lattices, One Dimension, Superlattice
Subjects:Sciences > Physics > Materials
ID Code:25164
Deposited On:29 Apr 2014 12:03
Last Modified:12 Feb 2018 18:36

Origin of downloads

Repository Staff Only: item control page