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Study of the relationship between crystal structure and luminescence in rare-earth-implanted Ga_2O_3 nanowires during annealing treatments

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López, Iñaqui and Lorenz, K. and Nogales Díaz, Emilio and Méndez Martín, Bianchi and Piqueras de Noriega, Javier and Alves, E. and García, J. A. (2014) Study of the relationship between crystal structure and luminescence in rare-earth-implanted Ga_2O_3 nanowires during annealing treatments. Journal of Materials Science, 49 (3). pp. 1279-1285. ISSN 0022-2461

Official URL: http://dx.doi.org/10.1007/s10853-013-7811-x


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Abstract

A systematical analysis of the correlation between the crystalline quality and the luminescence of rare-earth-implanted ß-Ga_2O_3 nanostructures with potential applications in visible and ultraviolet photonics is presented. Europium ions led to red emission while gadolinium ions are efficient ultraviolet emitters. Different degrees of lattice recoveries of the nanostructures have been achieved after implantation by rapid thermal annealing treatments carried out at different temperatures. The recovery process has been analyzed by transmission electron microscopy (TEM), high-resolution TEM, and Raman techniques. High-fluence implantation with either of the two rare earth ions induces partial amorphization of the structures. Partial recrystallization of the nanostructures above 500 ºC is revealed by Raman analysis. Nearly complete recovery of the crystal structure is obtained in the annealing temperature range 900-1100 ºC, coincident with the expected value for bulk Ga_2O_3. Cathodoluminescence and photoluminescence allowed comparison of the Eu^3+ and Gd^3+ intraionic luminescence lines after annealing at different temperatures and their correlation with the crystallinity. It has been found that the width of the Eu^3+ luminescence lines clearly correlates with the width of the Raman peaks, both decreasing with annealing temperature, which shows the possibility of using the luminescence of this rare earth as a probe for lattice disorder. On the other hand, our results suggest that Gd^3+ lines are much less sensitive to disorder.


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© Springer.
This work has been supported by MICINN through Project MAT 2012-31959, and Consolider CSD 2009-00013. The authors are grateful to Dr. Luca Gregoratti at the Sincrotrone Elettra Trieste for useful advice on XPS measurements. We thank Sergio Miranda (IST/ITN) for the RTA treatments. Financial support by FCT Portugal is acknowledged (PTDC/CTM/100756/2008; PTDC/CTM-NAN/2156/2012).

Uncontrolled Keywords:Oxide, Spectroscopy, Spectra, Gan
Subjects:Sciences > Physics > Materials
ID Code:25265
Deposited On:08 May 2014 11:13
Last Modified:08 May 2014 11:13

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