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Growth and characterization of CdTe:Ge:Yb

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Sochinskii, N. V. and Saucedo, E. and Abellan, M. and Rodríguez Fernández, José and Hidalgo Alcalde, Pedro and Piqueras de Noriega, Javier and Ruiz, C.M. and Bermudez, V. and Dieguez, E. (2008) Growth and characterization of CdTe:Ge:Yb. Journal of Crystal growth, 310 (7-sep). pp. 2076-2079. ISSN 0022-0248

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Official URL: http://dx.doi.org/10.1016/j.jcrysgro.2007.11.080


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Abstract

Cadmium telluride (CdTe) crystals and epitaxial layers were grown by the vertical Bridgman method and vapor-phase epitaxy, respectively, to obtain the high-resistive material suitable for X- and gamma-ray detectors. The crystals and layers were doped with Ge at the concentration of 5 x 10(17) cm(-3) and co-doped with the rare element Yb at the concentration range from 1 x 10(17) to 1 x 10(19) cm(-3). The CdTe:Ge:Yb samples were studied by the structural and electrical characterization techniques, low-temperature photoluminescence (PL) and cathodoluminescence (CL) spectroscopy and CL imaging. Experimental findings testify that homogeneous crystals and layers of reasonably good structural quality can be grown with the Yb concentration below the value of 5 x 10(18)cm(-3) that is estimated to be the limit for Yb solubility in CdTe:Ge:Yb. These findings seem to be related with the purification effect caused by the interaction of the Yb dopant with the group I residual impurities.


Item Type:Article
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© 2007 Elsevier B.V. All rights reserved.
International Conference on Crystal Growth (15. 2007 . Salt Lake City,Utah).
This work has been partly supported by the projects CAM SENSORCDT S-0505/MAT/0209 and EU FP6 PHOLOGIC 017158.

Uncontrolled Keywords:Defect Structure, Doped Cdte, Crystals, Photoluminescence, Simulation
Subjects:Sciences > Physics > Materials
ID Code:25525
Deposited On:23 May 2014 16:44
Last Modified:23 May 2014 16:44

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