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Cathodoluminescence microscopy and spectroscopy of porous n-InP

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Hidalgo Alcalde, Pedro and Piqueras de Noriega, Javier and Sirbu, L. and Tiginyanu, M. (2005) Cathodoluminescence microscopy and spectroscopy of porous n-InP. Semiconductor Science and Technology, 20 (12). pp. 1179-1182. ISSN 0268-1242

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Official URL: http://dx.doi.org/10.1088/0268-1242/20/12/006


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Abstract

The luminescence of porous InP prepared by electrochemical etching is investigated by cathodoluminescence (CL) in a scanning electron microscope (SEM). Anodization causes a strong reduction of CL intensity as well as a blue spectral shift. Additional blue shift and enhancement of CL intensity is observed in samples cracked in vacuum by the effect of the SEM electron beam, which is explained by the reduction of the influence of surface states on the recombination mechanism. The relationship of the CL spatial distribution with the multilayer porous structure is described.


Item Type:Article
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© 2007 IOP Publishing Ltd.
This work has been supported by the Ministry of Education and Science of Spain under a Ramon y Cajal Contract, by the project MAT2003-09873 and by the project MEC (MAT 2003-00455).

Uncontrolled Keywords:Visible Photoluminescence, Gap, Gaas, Uniform, Layers, Pores
Subjects:Sciences > Physics > Materials
ID Code:25547
Deposited On:23 May 2014 16:49
Last Modified:23 May 2014 16:49

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