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Structural characterisation of (11(2)over-bar0) 4H-SiC substrates by cathodoluminescence and X-ray topography

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Hidalgo Alcalde, Pedro and Ottaviani, L. and Idrissi, H. and Lancin, M. and Martinuzzi, S. and Pichaud, B. (2004) Structural characterisation of (11(2)over-bar0) 4H-SiC substrates by cathodoluminescence and X-ray topography. European Physical Journal-Applied Physics, 27 (1-mar). pp. 231-233. ISSN 1286-0042

Official URL: http://dx.doi.org/10.1051/epjap:2004100


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Abstract

Silicon Carbide (SiC) is a wide band gap semiconductor, having opto-electronic properties that are suitable for many applications. Some structural defects due to crystal growth and/or doping technologies are commonly present in the substrates of SiC. The (11 (2) over bar0)-oriented 4H-SiC bulk wafers are particularly investigated, due to some advantages with respect to the (0001)-Si face. One of these advantages is a better crystal reordering during post-implantation annealing. In this paper cathodoluminescence (CL) and X-Ray topography measurements have been carried out in order to investigate the optical and structural properties of commercial (11 (2) over bar0) 4H n(+)-type substrates.


Item Type:Article
Additional Information:

© E D P Sciences
International Conference on Defects - Recognition, Imaging and Physics in Semiconductors (DRIP 10). (10. 2003. Batz sur Mer, Francia).

Uncontrolled Keywords:Growth, Layers, Face
Subjects:Sciences > Physics > Materials
ID Code:25573
Deposited On:27 May 2014 17:55
Last Modified:27 May 2014 17:55

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