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FeB and CrB pair reassociation kinetics in imperfect Si controlled by contactless lifetime scan maps

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Palais, O. and Hidalgo Alcalde, Pedro and Martinuzzi, S. (2004) FeB and CrB pair reassociation kinetics in imperfect Si controlled by contactless lifetime scan maps. European Physical Journal-Applied Physics, 27 (1-mar). pp. 483-485. ISSN 1286-0042

Official URL: http://dx.doi.org/10.1051/epjap:2004048


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Abstract

The kinetics of "metal-acceptor" pairing in boron-doped multicrystalline samples are investigated by means of contactless lifetime measurement. The case of FeB and CrB pairs is discussed and the influence of extended defect is evidenced for FeB. It is found that the reassociation of the "metal-acceptor" pairs is fast immediately after the dissociation and then slows down for several days. The results allow the identification of mixed contamination by Cr and Fe.


Item Type:Article
Additional Information:

© E D P Sciences.
International Conference on Defects - Recognition, Imaging and Physics in Semiconductors (DRIP 10) (10. 2003. Batz sur Mer, Francia)

Uncontrolled Keywords:Surface Photovoltage, Silicon, Iron
Subjects:Sciences > Physics > Materials
ID Code:25574
Deposited On:27 May 2014 18:01
Last Modified:27 May 2014 18:01

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