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Behaviour of metallic impurities at grain boundaries and dislocation clusters in multicrystalline silicon wafers deduced from contactless lifetime scan maps

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Hidalgo Alcalde, Pedro and Palais, O. and Martinuzzi, S. (2004) Behaviour of metallic impurities at grain boundaries and dislocation clusters in multicrystalline silicon wafers deduced from contactless lifetime scan maps. Journal of Physics-Condensed Matter, 16 (2). S19-S24. ISSN 0953-8984

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Official URL: http://dx.doi.org/10.1088/0953-8984/16/2/003


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Abstract

By means of a contactless microwave phase shift technique, the minority carrier lifetime and surface recombination velocity were measured in multicrystalline silicon wafers containing iron and chromium. The bulk lifetime can be deduced, leading to the determination of the concentration of interstitial iron [Fe-i] associated with boron, after pair dissociation annealing at 210 degreesC. It is found that [Fe-i] is higher in the vicinity of extended defects but decreases at the defects because the iron segregates irrespective of boron concentration and does not form pairs.


Item Type:Article
Additional Information:

© 2004 IOP Publishing Ltd.
International Workshop on Beam Injection Assessment of Microstructures in Semconductors. (7. 2003. Lille. Francia).
This work was sponsored by CNRS/ADEME (France), by Conseils Regional (PACA) and General (13)-France and by Secretaria General Educacion y Universidades (Spain).

Uncontrolled Keywords:Recombination
Subjects:Sciences > Physics > Materials
ID Code:25575
Deposited On:27 May 2014 17:00
Last Modified:27 May 2014 17:04

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