Universidad Complutense de Madrid
E-Prints Complutense

Structural characterization of 6H-and 4H-SiC polytypes by means of cathodoluminescence and x-ray topography

Impacto

Descargas

Último año

Rodríguez Fernández, José y Carcelen, V. y Hidalgo Alcalde, Pedro y Vijayan, N. y Piqueras de Noriega, Javier y Sochinskii, N. V. y Pérez, J. M. y Diéguez, E. (2004) Structural characterization of 6H-and 4H-SiC polytypes by means of cathodoluminescence and x-ray topography. Journal of Physics: Condensed Mater, 16 (2). S107-S114. ISSN 0953-8984

[img] PDF
Restringido a Sólo personal autorizado del repositorio hasta 31 Diciembre 2020.

638kB

URL Oficial: http://dx.doi.org/10.1088/0953-8984/16/2/013


URLTipo de URL
http://iopscience.iop.org/Editorial


Resumen

The cathodoluminescence (CL) technique is used to analyse the radiative recombination properties of four distinct silicon carbide (SiC) samples: a 6H-SiC n^+ -type Lely wafer, two off-axis 4H-SiC epitaxial layers of n type and p type, and a (11 (2) over bar0)-oriented 4H-SiC n^+-type substrate. The CL spectra, recorded at various temperatures and at various excitation conditions, show strong differences between the polytypes, indicating a better homogeneous distribution of radiative centres inside the 6H polytype than in the 4H one, and also between the different orientations. For the (11 (2) over bar0)-oriented 4H sample, luminescence features decrease when the excitation intensity increases, probably due to a more significant indirect transition band. The CL spectra also vary for the same sample, due to the impurity and the microscopic defect density variations. Comparisons between two local spectra taken in two distinct areas of the (11 (2) over bar0)-oriented 4H sample, and with images obtained by x-ray topography in the same areas, allow us to establish that some structural defects are involved in luminescence centres. A deep centre involved in green luminescence (at 1.80 eV) is found to be associated with basal plane dislocations with the Burgers vector b = (1/3)(11 (2) over bar0).


Tipo de documento:Artículo
Información Adicional:

© 2004 IOP Publishing Ltd.
International Workshop on Beam Injection Assessment of Microstructures in Semiconductors (7. 2003. Lille,Francia).

Palabras clave:Epitaxial Layers, Luminescence
Materias:Ciencias > Física > Física de materiales
Código ID:25580
Depositado:27 May 2014 18:09
Última Modificación:27 May 2014 18:09

Descargas en el último año

Sólo personal del repositorio: página de control del artículo