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Electrical and compositional properties on Bridgman-grown Gd-doped GaSb substrates

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Plaza, J. L. and Hidalgo Alcalde, Pedro and Méndez Martín, Bianchi and Piqueras de Noriega, Javier and Castaño, J. L. (2001) Electrical and compositional properties on Bridgman-grown Gd-doped GaSb substrates. Materials Science and Engineering B-Solid State Materials for Advanced Technology, 81 (1-mar). pp. 157-160. ISSN 0921-5107

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Official URL: http://dx.doi.org/10.1016/S0921-5107(00)00711-X


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Abstract

In this work pure and Gd-doped GaSb ingots with different dopant concentrations were grown by the Bridgman Method. The compositional and electrical analysis carried out on these materials have shown the dependence of these results on the initial dopant concentration. The analysis have revealed the presence of inclusions which have been identified as Gd-Sb precipitates. The doped material was found to be p-type with a maximum value of the carrier density at the central region of the ingots. It has been also demonstrated that the Gd enhances the A band emission reducing the band-gap emission.


Item Type:Article
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© 2001 Elsevier Science B.V.
Spring Meeting of the European-Materials-Research-Society (2000. Strasbourg, Francia).
This work has been supported by CICYT under the project ESP-98-1340.

Uncontrolled Keywords:Gallium-Phosphide, Interface, Gaas, Er
Subjects:Sciences > Physics > Materials
ID Code:25599
Deposited On:27 May 2014 18:22
Last Modified:27 May 2014 18:22

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