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Recombination processes in Te-doped ZnO microstructures

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Iribarren, A. and Fernández Sánchez, Paloma and Piqueras de Noriega, Javier (2014) Recombination processes in Te-doped ZnO microstructures. Physica Status Solidi B-Basic Solid State Physics, 251 (3). pp. 683-688. ISSN 0370-1972

Official URL: http://dx.doi.org/10.1002/pssb.201248600


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Abstract

Cathodoluminescence (CL) of Te doped elongated ZnO microstructures obtained by a vapour-solid (V-S) technique has been investigated. The CL intensity changes along the microstructures axis are related to the gradient of Te content, which influences the intensity of the ZnO deep-level (DL) emission band. The main defects are vacancy complexes which are partially passivated by the isoelectronic Te doping. The weight on the total luminescence of the radiative processes related to defects has been estimated. A straightforward method based on the measurement of the band-to-band luminescence intensity under constant excitation and experimental conditions has been used. The recombination lifetimes for transition through defect levels were also estimated. [GRAPHICS] SEM image and cathodoluminescence emission of needle- and pencil-like TeO2-doped ZnO microstructures.


Item Type:Article
Additional Information:

(C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
This research was partially supported by MCINN (Projects MAT2009-07882, MAT2012-31959 and CSD2009-00013).

Uncontrolled Keywords:Point-Defects, Thin-Films, Luminescence, Cathodoluminescence, Photoluminescence, Photoconductivity, Semiconductors, Epilayers, Znte
Subjects:Sciences > Physics > Materials
ID Code:25623
Deposited On:05 Jun 2014 16:04
Last Modified:05 Jun 2014 16:04

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