Publication: Electrical decoupling effect on intermediate band Ti-implanted silicon layers
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2013-04-03
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Mártil de la Plaza, Ignacio
García Hemme, Eric
Prado Millán, Álvaro del
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IOP Publishing LTD
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Abstract
We investigated the electrical transport properties of ultraheavily Ti-implanted silicon layers subsequently pulsed laser melted (PLM). After PLM, the samples exhibit anomalous electrical behaviour in sheet resistance and Hall mobility measurements, which is associated with the formation of an intermediate band (IB) in the implanted layer. An analytical model that assumes IB formation and a current limitation effect between the implanted layer and the substrate was developed to analyse this anomalous behaviour. This model also describes the behaviour of the function V/Delta V and the electrical function F that can be extracted from the electrical measurements in the bilayer. After chemical etching of the implanted layer, the anomalous electrical behaviour observed in sheet resistance and Hall mobility measurements vanishes, recovering the unimplanted Si behaviour, in agreement with the analytical model. The behaviour of V/Delta V and the electrical function F can also be successfully described in terms of the analytical model in the bilayer structure with the implanted layer entirely stripped.
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© 2013 IOP Publishing Ltd. The authors would like to thank the CAI de Técnicas Físicas of the Universidad Complutense de Madrid for ion implantations, metallic evaporations and measurements with the optical profilometer. This work was partially supported by the Project NUMANCIA II (Grant No S-2009/ENE/1477) funded by the Comunidad de Madrid. Research by E García-Hemme has been partly supported by a PICATA predoctoral fellowship of the Moncloa Campus of International Excellence (UCM-UPM). DP and JO are grateful to Professors A Luque and A Martí for useful discussions and guidance and also acknowledge financial support from the MICINN within the program Juan de la Cierva (JCI-2011-10402 and JCI-2011-11471).
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