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Double ion implantation and pulsed laser melting processes for third generation solar cells

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Mártil de la Plaza, Ignacio and García Hemme, Eric and García Hernansanz, Rodrigo and González Díaz, Germán and Olea Ariza, Javier and Prado Millán, Álvaro del (2013) Double ion implantation and pulsed laser melting processes for third generation solar cells. International Journal of Photoenergy, 2013 . ISSN 1110-662x

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Official URL: http://dx.doi.org/10.1155/2013/473196


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Abstract

In the framework of the third generation of photovoltaic devices, the intermediate band solar cell is one of the possible candidates to reach higher efficiencies with a lower processing cost. In this work, we introduce a novel processing method based on a double ion implantation and, subsequently, a pulsed laser melting (PLM) process to obtain thicker layers of Ti supersaturated Si. We perform ab initio theoretical calculations of Si impurified with Ti showing that Ti in Si is a good candidate to theoretically form an intermediate band material in the Ti supersaturated Si. From time-of-flight secondary ion mass spectroscopy measurements, we confirm that we have obtained a Ti implanted and PLM thicker layer of 135 nm. Transmission electron microscopy reveals a single crystalline structure whilst the electrical characterization confirms the transport properties of an intermediate band material/Si substrate junction. High subbandgap absorption has been measured, obtaining an approximate value of 10 4 cm(-1) in the photons energy range from 1.1 to 0.6 eV.


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© 2013 Eric García-Hemme et al. The authors would like to acknowledge the C.A.I. de Técnicas Físicas of the Universidad Complutense de Madrid for the ion implantations and metallic evaporations, the Nanotechnology and Surface Analysis Services of the Universidad de Vigo C.A.C.T.I. for ToF-SIMS measurements, and the C.A.I. de Microscopía of the Universidad Complutense de Madrid for TEM measurements. The authors thankfully acknowledge the computer resources, technical expertise, and assistance provided by theCentro de Supercomputación y Visualización de Madrid (CeSViMa) and the Spanish Supercomputing Network. They would like also to thanks Dr. J. Herrero (CIEMAT) for UV-VIS-IR measurements facilities. This work was partially supported by the Project NUMANCIA II (Grant no. S-2009/ENE/1477) funded by the Comunidad de Madrid. Research by Eric García-Hemme was also supported by a PICATA predoctoral fellowship of the Moncloa Campus of International Excellence (UCM-UPM). Javier Olea and David Pastor thank Professor A. Martí and Professor A. Luque for the useful discussions and guidance and acknowledge the financial support from the MICINN within the program Juan de la Cierva (JCI-2011-10402 and JCI-2011-11471), under which this research was undertaken.

Uncontrolled Keywords:Free Carrier Absorption, Augmentes-Wave Method, Intermediate-Band, Silicon.
Subjects:Sciences > Physics > Electricity
Sciences > Physics > Electronics
ID Code:25774
Deposited On:10 Jun 2014 07:48
Last Modified:10 Dec 2018 14:58

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