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Depth profile study of Ti implanted Si at very high doses

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Mártil de la Plaza, Ignacio and González Díaz, Germán and Olea Ariza, Javier (2011) Depth profile study of Ti implanted Si at very high doses. Journal of Applied Physics, 110 (6). ISSN 0021-8979

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Official URL: http://dx.doi.org/10.1063/1.3626466


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Abstract

A detailed study on the resulting impurity profile in Si samples implanted with high doses of Ti and subsequently annealed by pulsed-laser melting (PLM) is reported. Two different effects are shown to rule the impurity profile redistribution during the annealing. During the melting stage, the thickness of the implanted layer increases while the maximum peak concentration decreases (box-shaped effect). On the contrary, during the solidifying stage, the thickness of the layer decreases and the maximum peak concentration increases (snow-plow effect). Both effects are more pronounced as the energy density of the annealing increases. Moreover, as a direct consequence of the snow-plow effect, part of the impurities is expelled from the sample through the surface.


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© 2011 American Institute of Physics. Authors would like to acknowledge the Nanotechnology and Surface Analysis Services of the Universidad de Vigo C.A.C.T.I. for ToF-SIMS measurements, C.A.I. de Microscopía of the Universidad Complutense de Madrid for TEM measurements and C.A.I. de Técnicas Físicas of the Universidad Complutense de Madrid for ion implantation experiments. This work was partially supported by the projects NUMANCIA-II (Grant No. S2009/ENE/1477) funded by the Comunidad de Madrid and GENESIS-FV (Grant No. CSD2006-00004) funded by the Spanish Consolider National Program.

Uncontrolled Keywords:Efficiency Solar-Cells, Silicon Layers, Laser, Recombination, Enhancement, Absorption, Interface, Alloys.
Subjects:Sciences > Physics > Electricity
Sciences > Physics > Electronics
ID Code:25822
Deposited On:13 Jun 2014 10:37
Last Modified:10 Dec 2018 14:58

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