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Laser thermal annealing effects on single crystal gallium phosphide



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Mártil de la Plaza, Ignacio y González Díaz, Germán y Olea Ariza, Javier (2009) Laser thermal annealing effects on single crystal gallium phosphide. Journal of Applied Physics, 106 (5). ISSN 0021-8979

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URL Oficial: http://dx.doi.org/10.1063/1.3187902

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We have studied the laser thermal annealing (LTA) effects on single crystal GaP. The samples have been analyzed by means of Raman spectroscopy, glancing incidence x-ray diffraction (GIRXD), and transmission electron microscopy (TEM) measurements. After LTA process, the Raman spectra of samples annealed with the highest energy density show a forbidden TO vibrational mode of GaP. This result suggests the formation of crystalline domains with a different orientation in the annealed region regarding the GaP unannealed wafer. This behavior has been corroborated by GIXRD measurements. TEM images show that the LTA produces a defective layer with disoriented crystalline domains in the surface. The depth of this defective layer increases with the energy density of LTA. The lack of crystallinity after LTA processes could be related with the high bond energy value of GaP.

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© 2009 American Institute of Physics. The authors would like to acknowledge the CAI de Difracción de Rayos X and CAI de Microscopía of the Universidad Complutense de Madrid for GIXRD measurements and TEM measurements, respectively. This work was made possible because of the FPI program (Grant No. BES-2005-7063) and the Spanish Ministry of Education and Science under Contract No. MAT2007-63617. This work was partially supported by the Project NUMANCIA (Grant No. S-0505/ENE/000310) funded by the Comunidad de Madrid and by the Project GENESIS-FV (Grant No. CSD2006-00004) funded by the Spanish Consolider National Program.

Palabras clave:Implanted Gaas, Solar-Cells, Semiconductors, Efficiency, Alloys, Gap, INP, Recombination, Energy.
Materias:Ciencias > Física > Electricidad
Ciencias > Física > Electrónica
Código ID:25889
Depositado:17 Jun 2014 08:15
Última Modificación:10 Dic 2018 14:58

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