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Influence of doping level on the cathodoluminescence of Se-doped GaSb crystals

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Díaz-Guerra Viejo, Carlos and Vicent López, José Luis and Piqueras de Noriega, Javier and Dieguez, E. (2007) Influence of doping level on the cathodoluminescence of Se-doped GaSb crystals. Journal of Physics D-Applied Physics, 40 (1). pp. 137-143. ISSN 0022-3727

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Official URL: http://dx.doi.org/10.1088/0022-3727/40/1/005


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Abstract

The influence of the doping level on the radiative recombination properties of GaSb:Se crystals has been investigated by cathodoluminescence (CL) microscopy and spectroscopy in the scanning electron microscope. CL images evidence a high dislocation density and dopant segregation around the dislocation cores in highly-doped crystals. A progressive reduction of the Se content leads to a lower dislocation density and a more uniform luminescence spatial distribution. CL spectra reveal the existence of three Se-related emission bands, centred in all the samples investigated at about 765, 740 and 719 meV, whose relative intensity is influenced by the doping level. Measurements carried out at different temperatures and excitation densities indicate that these bands can be attributed to transitions from the conduction band to deep acceptor levels.


Item Type:Article
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© 2007 IOP Publishing Ltd.
This work has been carried out in the framework of the Fifth Framework European Programme for research, Project HPRNCT 2001-00199. Support from MCYT through Projects MAT2003-00455 and MAT2003-09873-C02-01 as well as from UCM-CM (Group 910146) is also acknowledged.

Uncontrolled Keywords:Bulk Gasb, Photoluminescence
Subjects:Sciences > Physics > Materials
ID Code:25911
Deposited On:18 Jun 2014 17:54
Last Modified:13 Feb 2018 19:24

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