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Titanium doped silicon layers with very high concentration

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Mártil de la Plaza, Ignacio y González Díaz, Germán y Olea Ariza, Javier (2008) Titanium doped silicon layers with very high concentration. Journal of Applied Physics, 104 (1). ISSN 0021-8979

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URL Oficial: http://dx.doi.org/10.1063/1.2949258


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Ion implantation of Ti into Si at high doses has been performed. After laser annealing the maximum average of substitutional Ti atoms is about 10(18) cm(-3). Hall effect measurements show n-type samples with mobility values of about 400 cm(2)/V s at room temperature. These results clearly indicate that Ti solid solubility limit in Si has been exceeded by far without the formation of a titanium silicide layer. This is a promising result toward obtaining of an intermediate band into Si that allows the design of a new generation of high efficiency solar cell using Ti implanted Si wafers.


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© 2008 American Institute of Physics. Authors would like to acknowledge the Nanotechnology and Surface Analysis Services of the Universidad de Vigo CACTI for SIMS measurements, the Center for Microanalysis of Materials of the Universidad Autónoma de Madrid for RBS measurements, CAI de difracción de rayos X of the Universidad Complutense de Madrid for GIXRD measurements, and CAI de Técnicas Físicas of the Universidad Complutense de Madrid for ion implantation experiments. This work was made possible thanks to the FPI (Grant No. BES-2005-7063) of the Spanish Ministry of Education and Science. This work was partially supported by the Project NUMANCIA (Grant No. S-0505/ENE/000310) funded by the Comunidad de Madrid and Project GENESIS-FV (Grant No. CSD2006-00004) funded by the Spanish Consolider National Program.

Materias:Ciencias > Física > Electricidad
Ciencias > Física > Electrónica
Código ID:25960
Depositado:08 Jul 2014 08:03
Última Modificación:08 Jul 2014 08:03

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