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Solidification features of cast and vertically fed Te-doped GaSb materials

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Vicent López, José Luis and Díaz-Guerra Viejo, Carlos and Piqueras de Noriega, Javier and Dieguez, E. (2006) Solidification features of cast and vertically fed Te-doped GaSb materials. Journal of Crystal Growth, 293 (2). pp. 285-290. ISSN 0022-0248

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Official URL: http://dx.doi.org/10.1016/j.jcrysgro.2006.05.069


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Abstract

Dilute Te-doped GaSb alloys have been prepared by the vertical feeding method (VFM) using both casting and feeding configurations. The structural and optical properties of the samples were characterized by etching, X-ray diffraction and cathodoluminescence in the scanning electron microscope. The obtained results confirm the variation of the segregation coefficient k observed in previous VFM Te-doped GaSb experiments. The increase of k and the grain structure refinement are attributed to the increase of the interface velocity. The feeding configuration of the VFM seems to be the most appropriate one to control segregation and grain size for Te-doped GaSb alloys.


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© 2006 Elsevier B.V. All rights reserved.
This work has been carried out in the frame of the Fifth Framework European Programme for research, HPRNCT 2001-00199 project. Support from MCYT through projects, MAT 2003-09873, ESP 2004-0041-E and MAT2003-00455 is also acknowledged.

Uncontrolled Keywords:Gallium Antimonide, Grain-Boundaries, Crystal-Growth; Silicon, Cathodoluminescence, Temperature, Germanium, Gap, Si
Subjects:Sciences > Physics > Materials
ID Code:25988
Deposited On:03 Jul 2014 17:48
Last Modified:13 Feb 2018 19:27

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