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Cathodoluminescence microscopy and spectroscopy of GaN epilayers microstructured using surface charge lithography

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Díaz-Guerra Viejo, Carlos and Piqueras de Noriega, Javier and Volciuc, O. and Popa, V. and Tiginyanu, I. M. (2006) Cathodoluminescence microscopy and spectroscopy of GaN epilayers microstructured using surface charge lithography. Journal of Applied Physics, 100 (2). ISSN 0021-8979

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Official URL: http://dx.doi.org/10.1063/1.2214210


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Abstract

Cathodoluminescence (CL) microscopy and spectroscopy have been used to investigate the optical properties of GaN microstructures patterned by Ar+ ion irradiation and subsequent photoelectrochemical (PEC) etching. Monochromatic CL images and CL spectra reveal an enhancement of several defect-related emission bands in a 10 mu m wide area around each microstructure. In addition, columnar nanostructures and nanoetch pits were found in the PEC etched areas. CL emission of the nanocolumns is dominated by free electron to acceptor transitions, while excitonic luminescence prevails in the rest of the etched GaN layers. Investigation of the sidewalls of the microstructures reveals that a CL emission band centered at about 3.41 eV, attributed to excitons bound to structural defects, is effectively suppressed after PEC etching only in the observed nanocolumns.


Item Type:Article
Additional Information:

© 2006 American Institute of Physics.
This work has been supported by MEC through Project No. MAT2003-00455, CAM through Project GR/MAT 630-04, U.S. Civilian Research and Development Foundation under Grant Nos. MR2-995 and MOR2-1033-CH-03, as well as by the Supreme Council for Research and Technological Development of Moldova.

Uncontrolled Keywords:Molecular-Beam Epitaxy, Damage-Induced Masking, Vapor-Phase-Epitaxy, Luminescence Properties, Freestanding Gan, Photoluminescence, Defects, Gallium, Illumination, Transitions
Subjects:Sciences > Physics > Materials
ID Code:25989
Deposited On:03 Jul 2014 17:54
Last Modified:03 Jul 2014 17:54

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